Electrical characteristics comparison between process and device structures of super junction VDMOS

In this paper, comparative study and discussion of electrical characteristic for simulated process structure and device structure of super junction (SJ) Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) is done. The process SJ structure has breakdown voltage (BV) around 600V and device structure has slightly higher BV around 650V.The SJ VDMOS process structure and device structure have area specific on resistances R
_on
38mΩ and 42mΩ respectively. The speciality of proposed process SJ VDMOS is that it has trench p-pillar that simplify the fabrication process steps and reduces device fabrication cost.