I. Introduction And Background
IN millimeter-wave wireless communication, one important issue is to generate high signal power in the RF domain [1]. Monolithic millimeter-wave integrated circuit (MMIC) based power amplifiers can outperform optical and diode based components in terms of output power in the frequency range from 0.1 to 1 THz. An overview of state-of-the-art power amplifier MMICs in the millimeter-wave regime is given in [2]. As a rule of thumb, a larger transistor channel width increases the output power. But the high frequency capability decreases with large transistor size. To stay with sufficiently small transistors, multiple amplifier branches can be parallelized to increase the effective output transistor width and thus the maximum output power of the circuit.