1.55 µm light emitter based on dislocation D1-emission in silicon

A new concept for light emitting diodes in silicon capable of emitting 1.55 µm is reported. It utilizes D1-band luminescence from a dislocation network in silicon. The dislocation network is created in a reproducible manner by silicon wafer direct bonding. A MOS-LED on silicon substrate and a novel two-electrode device in a thin SOI layer using p-n junctions are demonstrated. The maximum efficiency is expected to exceed 1% at room temperature.