Improvement of Preventing Particle Generation by Using Collision Assisted Sintering Process (CASP)

To suppress particle generation in a dry etching apparatus, the deposition method of Y
₂
O
₃
film used as chamber wall coating was studied. The conventional Y
₂
O
₃
coating is deposited by atmospheric plasma spraying. Compared to the conventional method, collision assisted sintering process (CASP) provided denser film with less defects, higher density, and less particle detachment, even after plasma exposure. By using CASP coating in the chamber, we were able to reduce particles by 67%.