Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

A P-SiC (Phosphorus doped Si
_1-x
C
_x
) SD (Source Drain) was developed on bulk-Si based nMOS FinFETs (n-FinFETs). P-SiC epitaxial growth on SD provides strain to boost n-FinFET mobility and drive current. Combination of LA (Laser Anneal) and low temperature RTA recovers P-SiC and PSi (Phosphorus doped Si, Si
_1-x
P
_x
) strain. A SiGe clad channel on pMOS FinFETs (p-FinFETs) was investigated. Narrower Si fin and SiGe epitaxial growth on fins increase mobility and drive current, which is based on the same carrier transport mechanism as conventional phonon scattering without velocity overshoot around 14nm node.