Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection

A physics-based compact transport and charge model for GaN HEMTs has been developed. The model includes effects such as self-heating, non-linear access region behavior, electron-phonon interaction etc. The model is validated against fabricated devices and is used to evaluate fT improvements in short channel devices. The model is also a suitable base for GaN FET circuit simulation compact models.