Application of Two-Phase Immersion Cooling Technique for Performance Improvement of High Power and High Repetition Avalanche Transistorized Subnanosecond Pulse Generators

In this article, we show the feasibility of improving the performance of a high voltage and high repetition avalanche transistor pulse generator by applying a two-phase immersion cooling technique. The forced air cooling, single-phase immersion cooling, and two-phase immersion cooling techniques were applied to a 60-stage subnanosecond pulse generator. The experimental results indicate that the two-phase immersion cooling technique can effectively control the temperature rising of the avalanche transistor and, thus, reduce the time base jitter and voltage amplitude jitter. Five types of dielectric fluid with different boiling temperatures were comparatively studied. The FC-72 was finally adopted for the balanced performance on voltage amplitude and repetition rate. The two-phase immersion cooling technique could reduce the thermal resistance between the case and ambient and increase the maximum power from 330 to 876 mW. With this cooling method, the surface temperature of the transistor can be effectively controlled below 62 °C. The pulse generator could achieve outstanding performance with a voltage of 2350 V and a rise time of 180 ps. It can work stably at 200 kHz for more than 30 min, and the burst repetition rate could be 260 kHz within 1 min. This article offers new perspectives in the design of high repetitive avalanche transistorized subnanosecond generators.