Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs

This letter introduces a new physics-based SPICE modeling method for the dynamic
on
-state resistance (
R
_on,dy
) of gallium nitride based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of
R
_on,dy
, a time-resolved electron mobility variation (Δ
μ
_eff
) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating
R
_on,dy
, the proposed Δ
μ
_eff
model is incorporated into the surface potential based advanced SPICE model for GaN HEMT. Simulative results prove the proposed models can predict the
R
_on,dy
induced power loss.