Development of a Wideband 220-GHz Subharmonic Mixer Based on GaAs Monolithic Integration Technology

A wideband 220 GHz subharmonic mixer based on monolithic integration technology is proposed in this paper. It features
$12~\mu \text{m}$
-thick GaAs membrane with anti-parallel Schottky diodes working at THz band monolithically integrated on the membrane. The optimization principles of low-parastics Schottky diodes and the fabrication process of GaAs MMIC membrane diodes are elaborated. To realize optimum performances of the mixer, the dimensions of the integrated diodes and the matching network are optimized with harmonic balance simulation and load-pull techniques. An IF low pass filter with compact microstrip resonance cell (CMRC) configuration and an improved perpendicular coax-to-microstrip connection are used to realize wide IF band. The measured results show that the single sideband (SSB) conversion loss of this mixer is less than 10.5 dB from 185 to 255 GHz with fixed IF of 1 GHz, while the double sideband (DSB) noise temperature is better than 1400 K in this frequency range. Using fixed local oscillator (LO) frequency of 110 GHz, the measured SSB conversion loss is 7.4–10.7 dB within 185–255 GHz, indicating the good performances of the mixer with IF from DC to 35 GHz. The GaAs monolithic integration technology provides an approach for massive manufacturing of identical circuits and the proposed mixer with wideband characteristics will be applied in 220 GHz imaging systems in the near future.