Analysis and Modeling of SiC MPS Diode and Its Parasitic Oscillation

SiC merged p-i-n Schottky (MPS) diodes have great potential in the construction of multiple power electronic circuits for their excellent static and dynamic characteristics. The ultrafast switching speed is unfortunately accompanied by undesirable parasitic oscillations, which have direct impact on the stability and reliability of these circuits. The wide use of SiC diodes is still limited by their uncertain reliability and a comprehensive diode physical model, which can be used to describe the device characteristics, including parasitic oscillations during reverse recovery, is still missing for the device safe operation. In this article, an accurate dynamic physical model based on the lumped-charge technique which can accurately estimate the switching oscillations is first developed for an SiC MPS diode considering all parasitic elements. Furthermore, the original static model is improved and many important semiconductor physical phenomenon are also included. In the end, simulation and experiments are carried out by a CETC WCSD60D330F19P SiC MPS diode to verify the proposed model.