I. Introduction
With wide bandgap, high thermal conductivity, and large critical electrical field, silicon carbide (SiC) has been widely recognized as an ideal material for next-generation power semiconductors [1], [2]. Compared with other wide bandgap materials, such as gallium nitride (GaN) and diamond, SiC has the most mature material quality and fabrication technology. Numerous SiC power devices have been developed, such as Schottky barrier diode (SBDs), MOSFETs, JFETs, and BJTs [3]–[9], and some of them have been introduced to commercial market.