High-Temperature Ultrasound Attenuation in Langasite and Langatate

The ultrasound attenuation in langasite crystals increases rapidly at about 800 K with increasing temperature for reasons that are not well understood. In this paper, the attenuation quantified as Q
^-1
of the langasite-type materials La
₃
Ga
₅
SiO
₁₄
(LGS) and La
₃
Ta
_0.5
Ga
_5.5
O
₁₄
(LGT) was studied from room temperature to 1653 and 1608 K, respectively, using resonant ultrasound spectroscopy. Two to three attenuation peaks can be seen. A change of the magnitudes of the largest two attenuation peaks in LGT was correlated with the changing color of an LGT sample, which is related to its oxygen vacancy concentration. Thus, the attenuation likely involves oxygen vacancies. The observed Q
^-1
can be explained well by a model based on the anelastic relaxation of two to three noninteracting point defects causing Debye peak-like attenuation maxima. The activation energies of the largest two relaxation peaks match the activation energies for different conductivity mechanisms in LGS and LGT. Thus, the oxygen movement-based conductivity and the relaxation processes seem to involve the exchange of ions and vacancies on the same positions. The largest two attenuation peaks are probably caused by the movement of ions induced by two different phenomena, the deformation of the lattice (pointdefect relaxation) on the one hand and the electric field via the piezoelectric effect (piezoelectric/carrier relaxation) on the other hand.