Novel Subterahertz High Isolation Stacked-SIW Power Divider

A new type of eight-way multilayer power divider is presented in this article. To form the power divider, eight layers of the same substrate integrated waveguides (SIWs) are stacked together and inserted into a WR10 rectangular waveguide (RWG). In order to achieve a low-loss broadband response when connecting two substrates with different dielectric constants, a wedge structure is designed and applied to the input port of the power divider. Auxiliary parts are designed for measurement, including SIW extension line, SIW absorbing load and SIW-to-RWG transition. The measurement results show that, from 90 to 110 GHz, the insertion loss is less than 1.35 dB, and the isolation is above 19 dB. The proposed power divider is small and simple, suitable for terahertz technology.