Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al$_{0.3}$Ga$_{0.7}$ As/GaAs Quantum Wells

We studied in detail the photocurrent generation process in two-step photon absorption in intermediate-band solar cells, including InAs quantum dots embedded in Al
_0.3
Ga
_0.7
As/GaAs quantum wells at room temperature. The photocurrent generated by the two-step photon absorption exhibited saturation as the interband excitation intensity increased in strength. On the other hand, as the intersubband excitation intensity increased, the twostep photoexcitation current deviated from a power law. Furthermore, the two-step photoexcitation current exhibiting saturation and deviation strongly depended on both the interband and intersubband excitation intensities. To interpret these phenomena, we performed a theoretical simulation of the two-step photoexcitation current. The results suggest that the photocurrent saturation and deviation were caused by filling of the intermediate states with electrons. Furthermore, our calculated results indicate that the electron-recombination lifetime in the intermediate states is extremely long. The results of the temperature dependence of the two-step photoexcitation current and the excitation intensity dependence of photoluminescence suggest that efficient electron-hole separation extends electron lifetime.