HfZrOx Hybrid DRAM/FRAM Arrays Featuring Excellent Endurance and Low Latency

A hybrid 1T-1C HfZrOx(HZO)-DRAM/FRAM (D-FRAM) enabling non-volatile memory (NVM) and DRAM modes at 130 nm node are experimentally demonstrated. Excellent data retention characteristics at the D-FRAM array were achieved in the NVM mode. Low operation voltage (2 V) and further improved endurance (>
$10^{{14}}$
) in the DRAM mode were also realized by avoiding polarization switching. Moreover, the hybrid D-FRAM implemented in this work had a unified hardware structure, which helped to realize dual NVM and DRAM advantages, thereby supporting the low latency and low power data movement between them in the hybrid arrays.