Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications

Low-frequency noise (LFN), or 1/
${f}$
-noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/
${f}$
-noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length (
${L}_{G}$
) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/
${f}$
-noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter,
$\alpha _{\text {H}} $
~
$5\times 10^{\text {-{6}}}$
and also have a low input-referred gate voltage noise spectral density,
${S}_{\text {VG}} = 4.3\,\,\mu \text{V}^{{2}}\,\,\mu \text{m}^{{2}}$
Hz
$^{\text {-1}}$
that are important for reliable cryogenic circuit applications.