Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer

In this letter, a high-performance dual-function device fabricated using one single SiO
₂
resistive switching layer is demonstrated. The SiO
₂
layer is sandwiched between Ag and n
⁺
-Si to form an Ag/SiO
₂
/n
⁺
-Si dual-function device with memory and selector features. As a memory device, it shows a high memory window of 10
⁷
, and can continually operate over 10
⁴
cycles. Nonvolatility and stability are examined using a retention and a stress test for 10
⁴
s. Measurement at 85°C is performed to further confirm the reliability of the memory feature. As a selector, the device shows an extremely low leakage current of 0.1 pA, a high selectivity of 10
⁶
, and a low turn-on energy consumption of 0.93 pJ. Moreover, it has steep turn-on and turn-off switching slopes of 1.7 mV/decade and 0.7 mV/decade. The reliability of the selector feature is confirmed by pulse operations and a stress test.