Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain

The reverse blocking p-type GaN (p-GaN) gate high electron mobility transistors with multi-column p-GaN/Schottky alternate-island drain (MPS-HEMTs) are proposed and experimentally demonstrated. The p-GaN/AlGaN junctions (P-islands) and Schottky-contacts (S-islands) are alternately located by the side of the drain electrode. Multiple columns of these alternate-islands are formed in the staggered pattern successively, which can regulate the distribution of current density in the forward conduction and facilitate the 3-dimensional expanding (3DE) effect of depletion regions under the reverse bias as revealed by simulations. The fabricated MPS-HEMTs exhibit the low on-set voltage
${V}_{\text {ON}}$
of 0.31 V benefiting from the S-islands, the high reverse breakdown voltage
BV
_R
of -1092 V from the P-islands, and simultaneously a low specific on-resistance
${R}_{\text {ON.SP}}$
of 8.3
$\text{m}\Omega \cdot $
cm
²
for
${L}_{\text {GD}}$
of 22
$\mu \text{m}$
. The high-performance MPS-HEMTs have shown a much-improved trade-off among
${V}_{\text {ON}}$
,
BV
_R
, and
${R}_{\text {ON.SP}}$
, which indicates the proposed multi-column p-GaN/Schottky alternate-island drain structure to be promising in p-GaN power device platforms.