Lu-Alloyed SnOx Films With Tunable Optical Bandgap for Deep Ultraviolet Detection

This work proposes a strategy of alloying SnO
_x
with Lu
₂
O
₃
to form an ultra-wide bandgap (>4.5 eV) ternary alloy film based on which a high-performance deep ultraviolet (DUV) detector is fabricated. A series of Lu
_y
Sn
_1-y
O
_x
(0 ≤ y ≤ 0.24) amorphous films are deposited on SiC substrates by magnetron sputtering with their band gap continuously adjustable from 4.0 eV to 4.9 eV. The findings here both confirm the feasibility of widening the band gap of Lu-alloyed SnO
_x
by increasing Lu content for the first time and prove the potential owned by this wide-bandgap alloy film in the field of DUV detection. This work can provide a reference for developing DUV detection technology through bandgap engineering in the future.