High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

We fabricated the HfZrO
₂
(HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of 1.5 V and high (100 ns) program/erase speeds at ±5 V. After 10
⁵
program/erase cycles, the MW was maintained at 1.09 V and the retention time was measured up to 10
⁴
s with no degradation. The fabricated HZO Fe-FinFET is compatible with the current FinFET process and has a high MW, a fast program/erase speed, and excellent reliability. Therefore, the fabricated Fe-FinFET is a promising candidate for high-density ferroelectric field-effect transistor memory applications.