3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a ~ 0.3 nm roughness of the 5 × 5 μm
²
anode recessed surface. Supported by the flat anode recess surface and optimized anode field plate design. When the anode-to-cathode spacing is 30 μm, the physical breakdown voltage (VBK) can reach 3.4 kV, with a specific on-resistance (R
_on,sp
) of 3.7 mΩ·cm
²
, the power figure of merit (V
_BK
²
/R
_on,sp
) can be as high as 3.1 GW/cm
²
, demonstrating its great potential for the application in power electronics.