Performance Enhancement of Field-Effect Transistors Based on In₂O₃ Nanofiber Networks by Plasma Treatment

In this report, In
₂
O
₃
nanofiber networks (NFNs) were prepared by electrospinning and the field-effect transistors (FETs) based on In
₂
O
₃
NFNs were fabricated. The effects of plasma treatment on the electrical performance of the FETs based on In
₂
O
₃
NFNs were investigated. It is found that the oxygen vacancy in In
₂
O
₃
NFNs can be tuned by the plasma treatment and the electrical performance of the FETs can be tuned accordingly. In this work, X-ray photoelectron spectroscopy was employed to investigate the chemical stoichiometry in In
₂
O
₃
nanofibers with respect to plasma treatment conditions. The electrical performances of the FETs based on In
₂
O
₃
NFNs treated by various plasma treatment conditions were systematically studied. It is found that, compared to those without O
₂
plasma treatment, the FET based on In
₂
O
₃
NFNs treated by O
₂
plasma at 120 W for 5 min exhibits high electrical performance, including the variation of threshold voltage from -22.34 to 7.81 V and current on/off ratio from ~10
³
to ~10
⁷
and a μ
_FE
of 1.51 cm
²
/Vs. This result demonstrates that moderate plasma treatment can be adopted to improve the electrical performance of the FETs based on metal oxide NFNs.