Temperature Tweaking of the Output Photovoltaic Parameters of Laser Power Converters

An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of In
_x
Ga
_1-x
As laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ~50% and ~40% (25 °C), respectively. For In
_0.18
Ga
_0.82
As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50 ÷ 60 °C with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the “standard” In
_0.23
Ga
_0.77
As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of +75 ÷ 100 °C.