High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator

Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO
₂
/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (<; 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.