Simulation Study of a Novel Full Turn-On RC-IGBT With Ultralow Energy Loss

A novel full turn-on RC-IGBT with ultralow energy loss is proposed and investigated by simulations. It features a “collector-side” semi-superjunction (CSJ) and a shorted collector trench (SCT). First, the SCT combined with the CSJ can stop and optimize the electric field without the N-buffer layer in the forward blocking state, leading to an optimized trade-off between breakdown voltage and forward voltage drop. Second, because of the lateral depletion region in the CSJ, the parasitic P-base/N-drift/P-pillar/ N-shorted thyristor can be triggered easily, enabling the novel IGBT to conduct reverse current. Third, due to the electron barrier set by the SCT and the CSJ, electron carriers are stored near the P-collector/N-pillar junction until it turns on. Consequently, the proposed RC-IGBT can eliminate the snapback effect completely in the forward conduction state. The simulation results show that, when compared with the FPL RC-IGBT, the proposed RC-IGBT delivers a comparable blocking capability while featuring full turn-on capability and a 25% forward voltage drop reduction, resulting in ultralow energy loss.