Influence of Skin Effect on the Current Distribution of Grounded-Gate NMOS Device

For the first time, the influence of fast pulse induced skin effect on the current distribution inside the grounded-gate NMOS (GGNMOS) is reported. The skin effect results in the current crowding at the finger edges of the GGNMOS, leading to the high photoemission and high substrate potential at those regions. This report comprehensively explains some of the decades-old unexplained physical phenomena.