Polycrystalline Diamond MOSFET With MoO3 Gate Dielectric and Passivation Layer

We report the hydrogen terminated polycrystalline diamond MOSFET with a 10-nm MoO
₃
gate dielectric and a 50-nm MoO
₃
passivation layer. The device with a gate length of 2 μm shows the saturation drain current (IDsat) of 100 mA/mm, the transconductance of 35 mS/mm, and the ON-resistance of 76.54 Q·mm at V
_GS
= -2.5 V. The stability of the repeated I
_DS
-V
_GS
measurements was demonstrated by a mere I
_Dsat
decrease of 3.3% between the first and third sweepings. In addition, the devices worked well at 200 °C delivering even larger I
_Dsat
than that at room temperature. The possible mechanisms for I
_DS
-V
_GS
changes in the successive measurements and induced by the change of the ambient temperature are suggested.