Magnetoresistive Effect of Amorphous In-Ga-Zn-O Magnetic Field Sensors

Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up to -69% at 25 mT. The detailed measurement results are reported and the mechanism for generation of the MR effect is discussed.

I. Introduction

In recent years, flat panel televisions and smart phones that use thin-film transistors (TFTs) have spread throughout the market. In particular, amorphous In-Ga-Zn-O (a-IGZO) TFTs are considered to be appropriate TFTs for high-resolution and large-sized displays because they have moderately high mobility, despite the use of low-temperature production processes [1].