Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector

This letter illustrates short-term relaxation in CeO
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-based resistive random access memory (RRAM) devices. Our results suggest that the noise of the serial selector device can impact the short-term relaxation, reduce the operating window of the RRAM, and increase the read error. Our findings indicate that the application of longer initial forming pulses can mitigate the short-term relaxation issue.