A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region

A silicon carbide (SiC) injection enhanced gate transistor with accumulation channel (AC-IEGT) is proposed in this letter, which has a barrier layer with small windows under the p+ shielding region. The new structure can enhance electron injection through accumulation channel. Thus, an optimized carrier density can be obtained in the emitter side. Compared with conventional SiC insulated gate bipolar transistor and carrier stored trench bipolar transistor, static simulation results show that the static characteristics of the device are improved significantly. The figure of merit (V
_BR
²
/R
_on,sp
) of AC-IEGT increases by 81.96 % and 17.78 %, respectively. The mix-mode circuit simulation results show that the proposed could be more suitable for ultra-high voltage application.