In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our previous work on OG-FETs on GaN on sapphire, utilizing a low damage gate-trench etch and using bulk GaN substrates, a breakdown voltage of 990 V with an ON-resistance 2.6 mQ · cm
²
, was achieved. Without edge termination, a high breakdown field of 1.6 MV/cm was achieved in these devices.