I. Introduction
Fast switches operating at high voltages are required in various applications [1]. Using semiconductor devices for this purpose is beneficial for generating pulses with high repetition rates, long service lifetime and compactness [2]–[5]. Kilovolt-range Drift Step Recovery Diodes (DSRDs) were manufactured using a unique deep aluminum diffusion process [6], [7]. This technology permits facile connection of diodes in series, reaching tens of kilovolt in amplitude while maintaining the high switching speed [4], [8]. In addition, High voltage pulses were demonstrated by cascading DSRD compression stages [9]. Sub-nanosecond rise times of 0.5 to were achieved by decreasing the diodes’ forward pumping pulse duration to some 30 to [10], [11]. Recent advances in silicon epitaxial growth technology can produce DSRDs with thick layers and abrupt junctions [12], [13].