Improving the Performances of CdTe Gamma Ray Detectors by H2/Ar ECR Plasma Processing

H
₂
/Ar electron cyclotron resonance plasma processing of the high-resistivity (111) CdTe crystals was studied to find its effect on the leakage current and the gamma ray detection properties of the detectors. All the crystals were chemically etched in a bromine-methanol (BM) solution prior to the plasma processing to obtain a smooth surface. A remarkable reduction in both the surface and the bulk leakage current was observed in the plasma processed detectors when compared with the unprocessed one. The gamma detection property of the detectors, both the spectral resolution and the peak shape, was also significantly improved. X-ray photoelectron spectroscopy confirmed that an excess Te-rich surface layer was present on the BM etched crystal, however, such layer was removed, and the surface atomic ratio was modified after the plasma processing. The improvement in the detector performance could be related to the change in the surface chemical states of the crystals. Hence, this could be a promising process for improving the detectors performance and their stabilities.