Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

The electrical characteristics of SiC Schottky barrier diodes with laminated Mo/C electrodes having a Mo and C atom composition ratio of 2:1 have been investigated. High thermal stability against annealing up to a temperature of 1050 °C has been found as a diode characteristic. The almost identical values of Schottky barrier height for the electrons (Φ
_Bn
) obtained in several measurements with the ideality factors of below 1.10 indicate the formation of an ideal Schottky contact with 4H-SiC substrates.