Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

In this letter, for the first time, a novel vertical implantation is introduced in bulk FinFETs and used to form self-aligned halo and punch-through stop pocket (PTSP) at the same time. This implantation is carried out after dummy gate removal in the all-last high-k /metal gate process. The formed halo and PTSP doping profiles improve short channel effect control and reduce V
_TH
variation. The process window related to the implantation is also discussed. This vertical implantation method is simple, effective, and has potential for future application of massive manufacture.