A Small Signal Amplifier Based on Ionic Liquid Gated Black Phosphorous Field Effect Transistor

In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be
$\sim 9$
and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200
$\mu \text{A}/\mu \text{m}$
at
$V_{\rm DD} =-0.5$
V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.