A Novel Hybrid Poly-Si Nanowire LDMOS With Extended Drift

A novel hybrid multiple nanowire (NW) channels lateral diffused MOS (LDMOS) with extended drift, which combines the advantages of high breakdown voltage, low specific on-resistance, and superior electrical characteristics is presented. This hybrid NW LDMOS based on polycrystalline silicon thin-film transistor exhibits a high ON/OFF ratio , a low subthreshold slope of 192.6 mV/decade, a high breakdown voltage of 272.6 V, and low specific on-resistance of 161.8 mΩ-cm
²
.