Bidirectional Photoelectric Response of Perovskite Oxide-Based Synaptic ReRAM Device

Photo sensing capability of an artificial synaptic device make it more valuable for brain-inspired computing systems, which can conquer the von Neumann bottleneck. In this letter, Ba0.7 Sr0.3 TiO3 (BST) based single layered resistive random access memory (ReRAM) device is proposed with its four different photoelectric applications. First, bidirectional photoelectric response (BPR) is achieved via 405 and 633 nm wavelengths stimulation. Second, this novel BPR contributes to the emulation of light potentiation, and light depression behaviors. Third, an important neurological behavior “experience dependent plasticity (EDP)” is mimicked by frequency modulation of 405 nm light pulse. Fourth, ultra-high (>200%) indices of post-tetanic potentiation and depression (PTP/PTD) are achieved by amplifying the device conductance as a result of two different pulse train stimulations. A convolutional neural network is designed to classify Zalando’s article images with a test accuracy of 87.7%. These results provide an opportunity for the development of multi-wavelength dependent multifunctional artificial brain-inspired systems.