Cryogenic Ferroelectric LiNbO3 Domain Wall Memory

Non-volatile memory devices have become crucial components in emerging fields like integrated circuits and quantum computing. However, their cryogenic use remains a challenge today. Here we fabricated ferroelectric domain wall memory devices using an X-cut LiNbO3 (LNO) thin film on silicon, and their on/off currents after the creation and erasure of conducting domain walls between two antiparallel/parallel domains were investigated at low temperatures. The readout current is sufficiently larger than
$10~\mu \text{A}$
, though the domain wall current decreases nearly by a half upon cooling of the device from 300 to 120 K. The cryogenic memory has a large on/off ratio (
$10^{{4}}{)}$
, long retention time (>10 years) and high endurance cycles (
$10^{{9}}{)}$
, and can be applied at extremely harsh environments.