12.7 MA/cm2 On-Current Density and High Uniformity Realized in AgGeSe/Al2O3 Selectors

We propose an AgGeSe/Al
₂
O
₃
/Pt selector with great potential in a dense memory array. In terms of on-current drive, selectivity, and uniformity, devices with the mixed AgGeSe layer outperform the Ag/Al
₂
O
₃
/Pt device. The introduction of GeSe not only blocks the diffusion of Ag, but also facilitates the backflow of Ag to the active electrode, therefore increasing the on-current. The ultra-high on-current drive (3 mA and 12.7 MA/cm
²
), high selectivity (10
¹⁰
), small variation, high thermal stability, and steep switching slope (0.27 mV/dec) realized in our AgGeSe/Al
₂
O
₃
/Pt device render it a promising candidate for selector application.