V₂C-Based Memristor for Applications of Low Power Electronic Synapse

Transition metal carbide/nitride (MXenes) have attracted widespread attention in recent years due to their unique structure and excellent electrochemical performance. In addition, MXene materials have adjustable interlayer spacing as well as rich functional groups on the bonding end, which provides great potential to enhance the performance of energy devices. However, three-atoms V
₂
C-based MXene was rarely investigated for memristors and its effects on devices are still unknown. In this work, we synthesized V
₂
C MXene and fabricated Ag/V
₂
C/TiO
₂
/W structural memristors. The advantages of V
₂
C on memristors were explored including the coexistence of volatile threshold switching (TS) and non-volatile memory switching (MS) behaviors, low Set and Reset voltages, and small cycle-to-cycle and device-to-device variations. Moreover, the space charge limited current (SCLC) model is the dominant switching mechanism. Additionally, two types of synaptic plasticity, i.e., long-term potentiation/depression (LTP/LTD), have been achieved by continuous pulse stimulations. These results in this study are of great significance for disclosing the possibilities of low power electronic synapses with V
₂
C.