Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy

Vertical GaN-on-GaN p-n diodes grown by ammonia molecular beam epitaxy (NH
₃
MBE) are reported in this letter for prospective high-power application devices. The diodes, consisting of only 4 μm drift layer with low unintentionalbackgrounddoping of ~ 3×10
¹⁵
cm
^-3
, showed a maximum breakdown voltage of >1.0 kV and a low differential specific on-resistance of 0.28 mΩ-cm
²
. Moreover, these diodes exhibited an excellent rectifying behavior with a low minimum ideality factor of 1.36 and a punch-through electric field comparable to the state-of-the-art vertical GaN-on-GaN p-n diodes grown by metalorganic chemical vapor deposition (MOCVD). These results suggest that all-MBE vertical GaN-on-GaN p-n diodes grown by NH
₃
MBE can be promising for small-size high-power electronic devices.