Effects of Temperature on the Performance of Hf₀.₅Zr₀.₅O₂-Based Negative Capacitance FETs

There arises the growing interest of negative capacitance field effect transistors (NCFETs) for low-power applications, however, temperature as an inevitable influencing factor, its effects on NCFETs require more research for practical applications. In this work, we fabricated Hf
_0.5
Zr
_0.5
O
₂
(HZO) based NC p-channel FETs and developed a corresponding TCAD simulation deck to study the temperature impact. DC characteristics of NCFETs and its baseline MOSFETs at the common operation temperature range (-50 to 85°C) are measured and simulated. With the increase of temperature, NCFET subthreshold slope (SS) increases much faster than kT/q demonstrating pyroelectric effect, and exceeds kT/q at ~350K and baseline MOSFETs at ~360K. Similarly, its on-current decreases more rapidly than baseline devices. Finally, we explained the temperature characteristics of NCFET with the help of a developed model through Landau-Khalatnikov (L-K) theory and temperature dependent internal gain (A
_V
).