Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

We report the effect of zinc-tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility (μ
_FE
) of 18.39 cm
²
/V · s, threshold voltage (V
_Th
) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: Δ V
_Th
of -1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.