1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)

In this letter, 4H-SiC high-voltage lateral junction barrier Schottky (LJBS) diodes are optimized by simulation and demonstrated experimentally. With the utilization of the DOUBLE-RESURFs structure, the devices have a more balanced electric field distribution, thereby enhancing the blocking ability. For three design values of the drift region length
${L}_{D}$
(
$10~\mu $
m,
$12~\mu $
m and
$15~\mu $
m), the devices exhibit the maximum breakdown voltages (BV
$_{\textit {MAX}}$
) ranging from 1210 V to 1650 V. Moreover, Baliga‘s figure of merit (BFOM) of 390 MW/cm2 with a specific ON-resistance (
${R}_{\textit {ON},\textit {sp}}$
) of 5.25 m
$\Omega \cdot $
cm2 has been achieved for the 1430 V device, which is the best performance compared to the reported SiC lateral power devices. Such an improvement brings enormous potential to the development of SiC monolithic power integrated circuits.