Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts

In this work, with the consideration of pulsing sequence of FeRAM operation, the impacts of hafnia-based ferroelectric (FE) dynamics on polarization switching and memory window (MW) are experimentally investigated. For the first time, it is found that additional polarization switching when read “0” (
${P}_{ {SW}{0}}$
) occurs, and the change of
${P}_{ {SW}{0}}$
is non-monotonical with varied pulse width. Moreover, the impact of
${P}_{ {SW}{0}}$
on MW is analyzed, the unchanged maximum amount of
${P}_{ {SW}{0}}$
under lower voltage operation may lead to severe MW degradation (47.1% @ 2V). It is concluded that longer pulse width is required for write operation than read operation, and with further proposed asymmetric operation scheme with longer write pulses, significant MW improvement is achieved, largely alleviating the MW reduction issue caused by extra switching
${P}_{ {SW}{0}}$
.