Depolarization Field Engineered Ferroelectric Mechanical Transistor With 0.3-Volts VDD

We propose a novel technology called depolarization field engineered ferroelectric mechanical transistor (Fe-MT), which achieves an exceptionally low operating voltage (
${V}_{\text {DD}}{)}$
of 0.3 volts. This achievement of
${V}_{\text {DD}}$
scaling is made possible by utilizing depolarization voltage with an amplitude of 11/−11.1 V for the pre-shrinkage of contact gap (
${g}_{\text {C}}{)}$
[
Fig. 1
], which is activated by a + 63/−66 V pulse stimulus. Additionally, our Fe-MTs maintain the device-level reconfigurability between N/P modes. This exciting development suggests that our Fe-MTs can serve as the fundamental building blocks for future generations of integrated circuits with high energy and area-efficiency.