Fast Speed Ga2O3 Solar-Blind Photodetectors With Low Temperature Process Engineering

Despite yet achieved ultrahigh responsivity, slow response speed remains the main short slab of Ga2O3 solar-blind photodetector (SBPD). Here, we reported a fast speed SBPD with sub-10 ms response speed by radio frequency sputter at room temperature at an optimized growth power, which even surpasses most counterparts with high temperature process. The enhanced response speed is contributed to higher binding energy and less trap states. Moreover, the device shows excellent photoresponse characteristics, including low dark current of 1.57 pA, decent responsivity of 0.81 A/W, and high photo to dark current ratio of
${6}.{6}\times {10} ^{{6}}$
. This study affords a possibility of swift Ga2O3 SBPD via a facile way without high temperature process engineering.