Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction

We demonstrated the monolithic integration of GaN-based driving metal-oxide-semiconductor field effect transistor (MOSFET) on micro-light-emitting diodes (
$\mu $
LEDs) by regrowing a hybrid tunnel junction (TJ) on top of a commercial green LED wafer. The hybrid TJ served not only as the current spreading layer for
$\mu $
LEDs, but the n/p/n structure of the LED + TJ stack could also be utilized for fabricating a quasi-vertical driving MOSFET. The
$\mu $
LED was connected to the MOSFET via the conductive n-GaN layer. By modulating the gate supply voltage, the MOSFET effectively controlled the injection current of the
$\mu $
LED, allowing for precise modulation of its output performance. The integrated 60-
$\mu \text{m}~\mu $
LED exhibited a high output power of 0.12 mW (~4.2 W/cm
²
) at a current of 0.3 mA (around 10 A/cm
²
) when the MOSFET was modulated with
$\text{V}_{\text {DD}}$
= 5 V and
$\text{V}_{\text {G}}$
= 16 V, demonstrating good
$\mu $
LED performance and comparable driving capability to previous GaN-based MOSFETs and oxide-based thin film transistors. This work provides a new method for GaN FET/LED monolithic integration, which paves the way for potential applications in visible light communication and flexible
$\mu $
LED displays.