Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

We investigate the effect of post-metal annealing temperature (
${T}_{\text {PMA}}$
) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of
${T}_{\text {PMA}}$
on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in
${T}_{\text {PMA}}$
. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.